RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3733C17-16GTZSW 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3733C17-16GTZSW 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3733C17-16GTZSW 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 11% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3733C17-16GTZSW 16GB
报告一个错误
更快的读取速度,GB/s
16.9
16
测试中的平均数值
更快的写入速度,GB/s
12.8
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3733C17-16GTZSW 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
27
读取速度,GB/s
16.0
16.9
写入速度,GB/s
12.5
12.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3158
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3733C17-16GTZSW 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273CH0-CH9 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMD16GX4M2E4000C19 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2400C15-8GNT 8GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3600C18-8GTRS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3733C17-16GTZSW 16GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-5066C20-8GVK 8GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
A-DATA Technology VDQVE1B16 2GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905678-065.A00G 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BL8G30C15U4W.8FE 8GB
报告一个错误
×
Bug description
Source link