Kingston KF552C40-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Kingston KF552C40-16 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

差异

  • 低于PassMark测试中的延时,ns
    30 left arrow 41
    左右 27% 更低的延时
  • 更快的读取速度,GB/s
    15.5 left arrow 7.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    13.2 left arrow 6.1
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时,ns
    30 left arrow 41
  • 读取速度,GB/s
    15.5 left arrow 7.8
  • 写入速度,GB/s
    13.2 left arrow 6.1
  • 内存带宽,mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 1512
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