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Kingston KHX1866C9D3/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Kingston KHX1866C9D3/8GX 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

总分
star star star star star
Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

差异 规格 评论

差异

Kingston KHX1866C9D3/8GX 8GB 需要考虑的原因
Kingston KHX1866C9D3/8GX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 15.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 -38% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 10.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KHX1866C9D3/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 26
  • 读取速度，GB/s
    15.8 left arrow 15.6
  • 写入速度，GB/s
    10.4 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2751 left arrow 2382

Kingston KHX1866C9D3/8GX 8GB RAM的比较

Kingston KHX1866C10D3/8G 8GB
Apacer Technology 78.C2GFL.C720B 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM的比较

Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
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Mushkin 991586 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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PNY Electronics PNY 2GB
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Crucial Technology BLS8G4D240FSA.16FBD 8GB
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Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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G Skill Intl F4-3200C16-16GTZRX 16GB
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Samsung M471B1G73QH0-YK0 8GB
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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Samsung M471B5273EB0-CK0 4GB
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