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Kingston KVR800D2N6/2G 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Kingston KVR800D2N6/2G 2GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 53
    左右 6% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 16.5
    测试中的平均数值
Gloway International Co. Ltd. TYP4U3000E16082C 8GB 需要考虑的原因
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.6 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 53
  • 读取速度，GB/s
    5,143.3 left arrow 16.5
  • 写入速度，GB/s
    1,905.1 left arrow 9.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2301

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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