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Kingston SNY1333D3S9ELC/4G 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Kingston SNY1333D3S9ELC/4G 4GB vs Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分
star star star star star
Kingston SNY1333D3S9ELC/4G 4GB

Kingston SNY1333D3S9ELC/4G 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

差异 规格 评论

差异

Kingston SNY1333D3S9ELC/4G 4GB 需要考虑的原因
Kingston SNY1333D3S9ELC/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 36% 更低的延时
Nanya Technology NT4GC64B8HG0NS-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13 left arrow 8.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 4.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Kingston SNY1333D3S9ELC/4G 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 45
  • 读取速度，GB/s
    8.3 left arrow 13.0
  • 写入速度，GB/s
    4.5 left arrow 9.0
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1196 left arrow 2079

Kingston SNY1333D3S9ELC/4G 4GB RAM的比较

Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM的比较

SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GNT 8GB
G Skill Intl F4-2400C17-8GNT 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X8GF2666C16K4 8GB
Corsair CM4X8GF2666C16K4 8GB
内存RAM
Kingston SNY1333D3S9ELC/4G 4GB
Kingston SNY1333D3S9ELC/4G 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMD32GX4M4C3200C14C 8GB
Corsair CMD32GX4M4C3200C14C 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
Transcend Information TS1GSH64V4B 8GB
Transcend Information TS1GSH64V4B 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9965669-031.A00G 16GB
Kingston 9965669-031.A00G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMD64GX4M4B3333C16 16GB
Corsair CMD64GX4M4B3333C16 16GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMSX64GX4M2A2666C18 32GB
Corsair CMSX64GX4M2A2666C18 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology GD2.2229BH.001 16GB
Apacer Technology GD2.2229BH.001 16GB
内存RAM