Kingston SNY1333D3S9ELC/4G 4GB vs Samsung M471B5273DH0-CH9 4GB

总分

Kingston SNY1333D3S9ELC/4G 4GB

Kingston SNY1333D3S9ELC/4G 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

差异规格评论

差异

Kingston SNY1333D3S9ELC/4G 4GB

需要考虑的原因
Kingston SNY1333D3S9ELC/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 47

左右 38% 更低的延时

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

9.3 8.3

测试中的平均数值
更快的写入速度，GB/s

5.9 4.5

测试中的平均数值

规格

完整的技术规格清单

Kingston SNY1333D3S9ELC/4G 4GB

Samsung M471B5273DH0-CH9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

29 47
读取速度，GB/s

8.3 9.3
写入速度，GB/s

4.5 5.9
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1196 1413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO2P32NCSV1-BEVS 16GB

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Corsair CM2X2048-6400C5 2GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

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SK Hynix DDR2 800 2G 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-3200C16-8GVK 8GB

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Kingston SNY1333D3S9ELC/4G 4GB

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Kingston KHX1600C9S3L/4G 4GB

Kingston TSB16D3LS1KFG/4G 4GB

Kingston TSB16D3LS1KFG/4G 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Samsung M386B4G70DM0-CMA4 32GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB