Kingston SNY1600S11-4G-EDEG 4GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

总分

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

差异规格评论

差异

Kingston SNY1600S11-4G-EDEG 4GB

需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 52

左右 44% 更低的延时

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

报告一个错误

更快的读取速度，GB/s

20.5 9.4

测试中的平均数值
更快的写入速度，GB/s

10.1 5.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston SNY1600S11-4G-EDEG 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 52
读取速度，GB/s

9.4 20.5
写入速度，GB/s

5.1 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1432 2472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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