Lexar Co Limited LD4AU016G-H3200GST 16GB vs A-DATA Technology AO1P32MC8T1-BW3S 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

A-DATA Technology AO1P32MC8T1-BW3S 8GB

需要考虑的原因
A-DATA Technology AO1P32MC8T1-BW3S 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 -32% 更低的延时
更快的读取速度，GB/s

18.7 17.8

测试中的平均数值
更快的写入速度，GB/s

15.8 12.5

测试中的平均数值

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 25
读取速度，GB/s

17.8 18.7
写入速度，GB/s

12.5 15.8
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 3729

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-4GVR 4GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Kingston KHX2666C16D4/4G 4GB

Kingston KHX2666C16D4/4G 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston RB24D4U7S8MB-8 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Corsair CMK128GX4M4E3200C16 32GB

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Samsung M323R2GA3BB0-CQKOD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240