RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BL16G30C15U4R.M16FE1 16GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Crucial Technology BL16G30C15U4R.M16FE1 16GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology BL16G30C15U4R.M16FE1 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
33
左右 -10% 更低的延时
更快的读取速度,GB/s
20.8
17.8
测试中的平均数值
更快的写入速度,GB/s
16.4
12.5
测试中的平均数值
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
30
读取速度,GB/s
17.8
20.8
写入速度,GB/s
12.5
16.4
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3285
3703
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G30C15U4R.M16FE1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-002.A00LF 2GB
Kingston K1CXP8-MIE 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
PUSKILL PJ16TFK1GM8 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M2A2400C16 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Transcend Information TS1GSH64V1H 8GB
Samsung M378B5673FH0-CH9 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Kingston 9965426-405.A00LF 8GB
Corsair CMD64GX4M8B2800C14 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston 9905700-013.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CM4X8GE2400C16K4 8GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Essencore Limited IM48GU88N26-GIIHA 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Asgard VMA45UG-MEC1U2AW1 8GB
报告一个错误
×
Bug description
Source link