RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
17.8
13.8
测试中的平均数值
更快的写入速度,GB/s
12.5
10.1
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
33
左右 -18% 更低的延时
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
28
读取速度,GB/s
17.8
13.8
写入速度,GB/s
12.5
10.1
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3285
2179
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMK8GX4M2A2666C16 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M378A1K43BB2-CTD 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Samsung M471A1K43BB1-CTD 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905743-045.A00G 16GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston HP26D4U9S8ME-8X 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2400C16-16GFT 16GB
Samsung M471B5273EB0-CK0 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905630-030.A00G 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
报告一个错误
×
Bug description
Source link