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Micron Technology 16JTF25664AZ-1G4F1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
比较
Micron Technology 16JTF25664AZ-1G4F1 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
总分
Micron Technology 16JTF25664AZ-1G4F1 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
低于PassMark测试中的延时,ns
40
41
左右 2% 更低的延时
更快的读取速度,GB/s
13.6
8.9
测试中的平均数值
更快的写入速度,GB/s
8.3
7.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
40
41
读取速度,GB/s
13.6
8.9
写入速度,GB/s
8.3
7.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2035
2126
Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较
Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB RAM的比较
A-DATA Technology DQVE1908 512MB
Crucial Technology CT51264BD160B.C16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF25664AZ-1G4F1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
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Kingston 9905458-017.A01LF 4GB
Corsair CMK16GX4M4A2800C16 4GB
报告一个错误
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