Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M393A2K40BB2-CTD 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 57% 更低的延时
更快的读取速度，GB/s

12.9 8.5

测试中的平均数值
更快的写入速度，GB/s

9.0 5.8

测试中的平均数值

Samsung M393A2K40BB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40BB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M393A2K40BB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 65
读取速度，GB/s

12.9 8.5
写入速度，GB/s

9.0 5.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 1981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT128GX4M8X3600C18 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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Team Group Inc. UD5-6400 16GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

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G Skill Intl F4-4133C19-8GTZSWF 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB