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Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
SK Hynix HMA851U6DJR6N-WM 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
30
左右 7% 更低的延时
需要考虑的原因
SK Hynix HMA851U6DJR6N-WM 4GB
报告一个错误
更快的读取速度,GB/s
16.3
12.9
测试中的平均数值
更快的写入速度,GB/s
12.2
9.0
测试中的平均数值
更高的内存带宽,mbps
23400
12800
左右 1.83 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
30
读取速度,GB/s
12.9
16.3
写入速度,GB/s
9.0
12.2
内存带宽,mbps
12800
23400
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)
2112
2761
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
SK Hynix HMA851U6DJR6N-WM 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMH32GX4M2D3600C18 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HYMP125S64CP8-S6 2GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Kingston 39P5429-006.AO01 2GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston HX432C15PB3/16G 16GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMR128GX4M8C3000C16 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M378A1K43BB2-CRC 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M2A2133C13 16GB
报告一个错误
×
Bug description
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