RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
比较
Micron Technology 16KTF1G64AZ-1G6E1 8GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
总分
Micron Technology 16KTF1G64AZ-1G6E1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16KTF1G64AZ-1G6E1 8GB
报告一个错误
低于PassMark测试中的延时,ns
40
67
左右 40% 更低的延时
更快的读取速度,GB/s
13.3
6.2
测试中的平均数值
更快的写入速度,GB/s
8.2
3.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
报告一个错误
规格
完整的技术规格清单
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
40
67
读取速度,GB/s
13.3
6.2
写入速度,GB/s
8.2
3.4
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2288
1076
Micron Technology 16KTF1G64AZ-1G6E1 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
AMD R538G1601S2LS 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB RAM的比较
A-DATA Technology AD4S320038G22-B 8GB
Corsair CMW32GX4M4K4266C19 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM4X4GF2400C16N2 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMK8GX4M1D2400C14 8GB
Samsung M393B1K70QB0-CK0 8GB
Essencore Limited KD48GU880-32A160U 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CM4X16GC3000C16K4D 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CM4X4GF2133C15S2 4GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Corsair CMW32GX4M4C3200C14 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
Samsung M471B5673FH0-CF8 2GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MRX4U300GJJM16G 16GB
报告一个错误
×
Bug description
Source link