Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

总分

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

差异规格评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 48

左右 48% 更低的延时

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

报告一个错误

更快的读取速度，GB/s

16.8 15.4

测试中的平均数值
更快的写入速度，GB/s

15.7 11.3

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 48
读取速度，GB/s

15.4 16.8
写入速度，GB/s

11.3 15.7
内存带宽，mbps

14900 25600

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2696 3047

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMWX8GD3000C15W4 8GB

Corsair CMWX8GD3000C15W4 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Corsair CMK16GX4M2C3600C20 8GB

Corsair CMK16GX4M2C3600C20 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMSX16GX4M2A2400C16 8GB

Corsair CMSX16GX4M2A2400C16 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 99P5723-006.A00G 8GB

Kingston 99P5723-006.A00G 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB