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Micron Technology 16KTF51264HZ-1G6M1 4GB
Crucial Technology CT51264BF160B.C16F 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Crucial Technology CT51264BF160B.C16F 4GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
Crucial Technology CT51264BF160B.C16F 4GB

Crucial Technology CT51264BF160B.C16F 4GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
Crucial Technology CT51264BF160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 43
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    12.8 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
Crucial Technology CT51264BF160B.C16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 42
  • 读取速度，GB/s
    10.6 left arrow 12.8
  • 写入速度，GB/s
    6.9 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 2011

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Crucial Technology CT51264BF160B.C16F 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5173QH0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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