RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
比较
Micron Technology 4ATF1G64HZ-3G2E2 8GB vs Micron Technology 8ATF1G64HZ-3G2J1 8GB
总分
Micron Technology 4ATF1G64HZ-3G2E2 8GB
总分
Micron Technology 8ATF1G64HZ-3G2J1 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E2 8GB
报告一个错误
更快的读取速度,GB/s
15.8
15.6
测试中的平均数值
需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2J1 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
49
左右 -44% 更低的延时
更快的写入速度,GB/s
11.9
11.0
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
49
34
读取速度,GB/s
15.8
15.6
写入速度,GB/s
11.0
11.9
内存带宽,mbps
25600
25600
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2534
2812
Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM的比较
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GU7AFR8N-TF 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMK16GX4M4B3400C16 4GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MSH64V4H 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK16GX4M4B3333C16 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology C 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK64GX4M4B3333C16 16GB
Samsung 1600 CL10 Series 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
ASint Technology SSZ302G08-GGNHC 2GB
Samsung M378A5244CB0-CRC 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C18-16GTZN 16GB
报告一个错误
×
Bug description
Source link