Micron Technology 8ATF1G64HZ-3G2R1 8GB vs Samsung M393B5170GB0-CK0 4GB

总分

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

总分

Samsung M393B5170GB0-CK0 4GB

Samsung M393B5170GB0-CK0 4GB

差异规格评论

差异

Micron Technology 8ATF1G64HZ-3G2R1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2R1 8GB

报告一个错误

更快的读取速度，GB/s

15.8 10.8

测试中的平均数值
更快的写入速度，GB/s

12.5 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2% 更高的带宽

Samsung M393B5170GB0-CK0 4GB

需要考虑的原因
Samsung M393B5170GB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 51

左右 -13% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Samsung M393B5170GB0-CK0 4GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

51 45
读取速度，GB/s

15.8 10.8
写入速度，GB/s

12.5 8.7
内存带宽，mbps

25600 12800

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2570 2237

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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