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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Micron Technology 36ASF4G72PZ-2G1A1 32GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
9.6
测试中的平均数值
更快的写入速度,GB/s
11.8
7.8
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB
报告一个错误
低于PassMark测试中的延时,ns
37
51
左右 -38% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
37
读取速度,GB/s
15.6
9.6
写入速度,GB/s
11.8
7.8
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2082
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905711-007.A00G 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2666C15-8GRKB 8GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3600C19-8GSXF 8GB
Samsung 1600 CL10 Series 8GB
Gloway International (HK) STK4U2400D15082C 8GB
Kingston 9965525-018.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL14-16-16 D4-2400 16GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2400C17-4GVR 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BL16G26C16U4B.16FE 16GB
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