Micron Technology 8ATF51264AZ-2G1A1 4GB vs Crucial Technology BLS8G4D32AESBK.M8FE 8GB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

差异规格评论

差异

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

18.1 12.2

测试中的平均数值
更快的写入速度，GB/s

14.6 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Micron Technology 8ATF51264AZ-2G1A1 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

12.2 18.1
写入速度，GB/s

9.7 14.6
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2501 3446

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR16GX4M2C3600C18 8GB

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SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMK32GX4M2A2133C13 16GB

Corsair CMK32GX4M2A2133C13 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Kingston 9905702-002.A00G 8GB

Kingston 9905702-002.A00G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB