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Micron Technology 8KTF51264HZ-1G6N1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
比较
Micron Technology 8KTF51264HZ-1G6N1 4GB vs Micron Technology 8KTF51264HZ-1G6E1 4GB
总分
Micron Technology 8KTF51264HZ-1G6N1 4GB
总分
Micron Technology 8KTF51264HZ-1G6E1 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8KTF51264HZ-1G6N1 4GB
报告一个错误
低于PassMark测试中的延时,ns
42
46
左右 9% 更低的延时
更快的读取速度,GB/s
13.5
12
测试中的平均数值
更快的写入速度,GB/s
8.3
7.5
测试中的平均数值
需要考虑的原因
Micron Technology 8KTF51264HZ-1G6E1 4GB
报告一个错误
规格
完整的技术规格清单
Micron Technology 8KTF51264HZ-1G6N1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
42
46
读取速度,GB/s
13.5
12.0
写入速度,GB/s
8.3
7.5
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2114
1959
Micron Technology 8KTF51264HZ-1G6N1 4GB RAM的比较
Patriot Memory (PDP Systems) PSD38G16002S 8GB
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Micron Technology 8KTF51264HZ-1G6E1 4GB RAM的比较
Micron Technology 8KTF51264HZ-1G9P1 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8KTF51264HZ-1G6N1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
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Kingston ACR512X64D3S13C9G 4GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
SK Hynix HMA82GR7AFR4N-VK 16GB
Samsung M393A2K40CB1-CRC 16GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
报告一个错误
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