Mushkin 991679ES 996679ES 2GB vs Shenzhen Xingmem Technology Corp 16GB

总分

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

总分

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

差异规格评论

差异

Mushkin 991679ES 996679ES 2GB

需要考虑的原因
Mushkin 991679ES 996679ES 2GB

报告一个错误

Shenzhen Xingmem Technology Corp 16GB

需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB

报告一个错误

低于PassMark测试中的延时，ns

43 63

左右 -47% 更低的延时
更快的读取速度，GB/s

14.3 7.7

测试中的平均数值
更快的写入速度，GB/s

7.8 5.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Mushkin 991679ES 996679ES 2GB

Shenzhen Xingmem Technology Corp 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 43
读取速度，GB/s

7.7 14.3
写入速度，GB/s

5.0 7.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1130 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 991679ES 996679ES 2GB

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Shenzhen Xingmem Technology Corp 16GB

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Kingston KHX2666C15D4/4G 4GB

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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Kingston 9965690-002.A00G 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Corsair VSA2GSDS667C4 2GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB