Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Crucial Technology BL8G32C16U4B.M8FE 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 17.9

测试中的平均数值

Crucial Technology BL8G32C16U4B.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 92

左右 -229% 更低的延时
更快的写入速度，GB/s

14.9 1,266.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 28
读取速度，GB/s

2,105.4 17.9
写入速度，GB/s

1,266.1 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

339 3460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Avant Technology J642GU42J5213N1 16GB

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Apacer Technology 78.01G86.9H50C 1GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB