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Nanya Technology M2N1G64TUH8D5F-AC 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
18.5
测试中的平均数值
需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
92
左右 -156% 更低的延时
更快的写入速度,GB/s
15.4
1,266.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
36
读取速度,GB/s
2,105.4
18.5
写入速度,GB/s
1,266.1
15.4
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
339
3426
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KHX426C13/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology D22.23263S.002 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMUA5110MH78HAF-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX8GX4M2A2666C18 4GB
Samsung M378A1K43EB2-CWE 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMW16GX4M2Z3200C16 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMW32GX4M2Z3200C16 16GB
TwinMOS 8DPT5MK8-TATP 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Samsung M471B5173BH0-CK0 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
报告一个错误
×
Bug description
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