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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hyundai Inc GP-GR26C16S8K1HU408 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Hyundai Inc GP-GR26C16S8K1HU408 8GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.3
    测试中的平均数值
Hyundai Inc GP-GR26C16S8K1HU408 8GB 需要考虑的原因
Hyundai Inc GP-GR26C16S8K1HU408 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    75 left arrow 92
    左右 -23% 更低的延时
  • 更快的写入速度，GB/s
    6.3 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 75
  • 读取速度，GB/s
    2,105.4 left arrow 14.3
  • 写入速度，GB/s
    1,266.1 left arrow 6.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 1548

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
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Kingmax Semiconductor FLFE85F-C8KM9 2GB
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Samsung M386A4G40DM0-CPB 32GB
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AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
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Corsair CMV4GX3M1B1600C11 4GB
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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Crucial Technology CT32G4SFD8266.C16FE 32GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KF2666C15S4/16G 16GB
Kingston KF2666C15S4/16G 16GB
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takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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Micron Technology 8ATF1G64AZ-2G3H1 8GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Micron Technology 36ASF4G72PZ-2G3B1 32GB
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Samsung M378B5673EH1-CF8 2GB
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G Skill Intl F4-2666C18-32GTZN 32GB
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G Skill Intl F5-5600J4040C16G 16GB
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G Skill Intl F4-3000C16-8GTRS 8GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
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Crucial Technology CT25664AA800.M16FM 2GB
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Samsung M393A2K40BB0-CPB 16GB
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Essencore Limited IM48GU88A30-FGGHMZ 8GB
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