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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hyundai Inc GP-GR26C16S8K1HU408 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Hyundai Inc GP-GR26C16S8K1HU408 8GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.3
    测试中的平均数值
Hyundai Inc GP-GR26C16S8K1HU408 8GB 需要考虑的原因
Hyundai Inc GP-GR26C16S8K1HU408 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    75 left arrow 92
    左右 -23% 更低的延时
  • 更快的写入速度，GB/s
    6.3 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 75
  • 读取速度，GB/s
    2,105.4 left arrow 14.3
  • 写入速度，GB/s
    1,266.1 left arrow 6.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    339 left arrow 1548

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9905701-018.A00G 16GB
Kingston 9905701-018.A00G 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9905625-036.A00G 16GB
Kingston 9905625-036.A00G 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-4000C16-16GVK 16GB
G Skill Intl F4-4000C16-16GVK 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Kingston HP32D4S2S1ME-4 4GB
Kingston HP32D4S2S1ME-4 4GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM