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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Panram International Corporation L421008G4C1528K34O8A 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.5
    测试中的平均数值
Panram International Corporation L421008G4C1528K34O8A 8GB 需要考虑的原因
Panram International Corporation L421008G4C1528K34O8A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 92
    左右 -318% 更低的延时
  • 更快的写入速度，GB/s
    12.8 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 22
  • 读取速度，GB/s
    2,105.4 left arrow 17.5
  • 写入速度，GB/s
    1,266.1 left arrow 12.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3013

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Panram International Corporation L421008G4C1528K34O8A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
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内存RAM
Micron Technology 16HTF25664AY-800E1 2GB
Micron Technology 16HTF25664AY-800E1 2GB
Crucial Technology CT25664AA800.C16FH 2GB
Crucial Technology CT25664AA800.C16FH 2GB
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Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
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Ramaxel Technology RMT3160ED58E9W1600 4GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
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内存RAM
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Kingston 9905471-076.A00LF 8GB
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Samsung M471A1G43DB0-0-B 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
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Crucial Technology CT8G4SFS8266.M8FE 8GB
内存RAM
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Corsair CM4X16GD3200C16K2E 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9965600-033.A00G 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
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Kingston 99U5734-014.A00G 16GB
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