Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 67

左右 46% 更低的延时
更快的写入速度，GB/s

9.5 8.4

测试中的平均数值

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

报告一个错误

更快的读取速度，GB/s

15.9 14.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 67
读取速度，GB/s

14.9 15.9
写入速度，GB/s

9.5 8.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2292 1895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C16-8GVR 8GB

G Skill Intl F4-3200C16-8GVR 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Corsair CMT64GX4M4Z3600C18 16GB

Corsair CMT64GX4M4Z3600C18 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB