Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology CT8G4SFS632A 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Crucial Technology CT8G4SFS632A 8GB

Crucial Technology CT8G4SFS632A 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 16% 更低的延时

Crucial Technology CT8G4SFS632A 8GB

需要考虑的原因
Crucial Technology CT8G4SFS632A 8GB

报告一个错误

更快的读取速度，GB/s

16.5 14.9

测试中的平均数值
更快的写入速度，GB/s

12.3 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT8G4SFS632A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 43
读取速度，GB/s

14.9 16.5
写入速度，GB/s

9.5 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2292 2885

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

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Kingmax Semiconductor GLAG42F-18---------- 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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TwinMOS 8DPT5MK8-TATP 2GB

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Chun Well Technology Holding Limited D4U0832161B 8GB

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Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB