Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Samsung M391A1G43EB1-CRC 8GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

低于PassMark测试中的延时，ns

61 77

左右 21% 更低的延时
更快的读取速度，GB/s

3 13.6

测试中的平均数值

Samsung M391A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M391A1G43EB1-CRC 8GB

报告一个错误

更快的写入速度，GB/s

6.9 2,077.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Samsung M391A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 77
读取速度，GB/s

3,835.2 13.6
写入速度，GB/s

2,077.3 6.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

606 1549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMK32GX4M2L3200C16 16GB

Corsair CMK32GX4M2L3200C16 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston 99U5743-031.A00G 16GB

Kingston 99U5743-031.A00G 16GB