Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-3600C16-16GTRGC 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

G Skill Intl F4-3600C16-16GTRGC 16GB

G Skill Intl F4-3600C16-16GTRGC 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 20.2

测试中的平均数值

G Skill Intl F4-3600C16-16GTRGC 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GTRGC 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 -108% 更低的延时
更快的写入速度，GB/s

16.2 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3600C16-16GTRGC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 26
读取速度，GB/s

3,573.5 20.2
写入速度，GB/s

1,308.1 16.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 3876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Samsung M378B5273CH0-CH9 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology BLS16G4D240FSC.16FD 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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G Skill Intl F4-4266C17-16GVKB 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB