Nanya Technology M2Y51264TU88B0B-3C 512MB vs Micron Technology 18ADF2G72AZ-2G3A1 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值

Micron Technology 18ADF2G72AZ-2G3A1 16GB

需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的写入速度，GB/s

14.7 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

3,573.5 17.8
写入速度，GB/s

1,308.1 14.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 3660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kingston 9905625-076.A00G 8GB

Kingston 9905625-076.A00G 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Smart Modular SF4721G8CKHH6DFSDS 8GB

Smart Modular SF4721G8CKHH6DFSDS 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905743-043.A00G 16GB

Kingston 9905743-043.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX3000C16D4/16GX 16GB

Kingston KHX3000C16D4/16GX 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston 9905663-008.A00G 16GB

Kingston 9905663-008.A00G 16GB