Nanya Technology NT2GC64B8HC0NS-CG 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

报告一个错误

更快的读取速度，GB/s

15.7 11.7

测试中的平均数值
更快的写入速度，GB/s

13.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

11.7 15.7
写入速度，GB/s

8.4 13.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1578 3318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Corsair CMR16GX4M2E4266C19 8GB

Corsair CMR16GX4M2E4266C19 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Transcend Information JM3200HLB-16GK 8GB

Transcend Information JM3200HLB-16GK 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB