Nanya Technology NT2GC64B8HC0NS-CG 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

报告一个错误

更快的读取速度，GB/s

15.7 11.7

测试中的平均数值
更快的写入速度，GB/s

13.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

11.7 15.7
写入速度，GB/s

8.4 13.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1578 3318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information JM2666HLG-16GK 8GB

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Kingston 99U5584-001.A00LF 4GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Corsair CMW32GX4M4C3200C14 8GB

Corsair CMW32GX4M4C3200C14 8GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB