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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M393A1G40EB1-CRC 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Samsung M393A1G40EB1-CRC 8GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 52
    左右 46% 更低的延时
  • 更快的读取速度，GB/s
    11.7 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.7
    测试中的平均数值
Samsung M393A1G40EB1-CRC 8GB 需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M393A1G40EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 52
  • 读取速度，GB/s
    11.7 left arrow 10.5
  • 写入速度，GB/s
    8.4 left arrow 7.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 2236

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

Samsung M393A1G40EB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 39P5429-006.AO01 2GB
Kingston 39P5429-006.AO01 2GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 9905670-012.A00G 8GB
Kingston 9905670-012.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Corsair CMU64GX4M4C3000C15 16GB
Corsair CMU64GX4M4C3000C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR3 1333+ 2GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU42J7240N4 16GB
Avant Technology J642GU42J7240N4 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston HP32D4U8S8HC-8XR 8GB
Kingston HP32D4U8S8HC-8XR 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMW16GX4M2Z4000C18 8GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM