Nanya Technology NT2GT64U8HD0BN-AD 2GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值

SK Hynix V-GeN D4H4GL26A8TL 4GB

需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB

报告一个错误

低于PassMark测试中的延时，ns

68 72

左右 -6% 更低的延时
更快的写入速度，GB/s

8.1 1,938.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 68
读取速度，GB/s

4,241.0 16.2
写入速度，GB/s

1,938.7 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

677 1812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

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King Tiger Technology Tigo-X3-3200MHz-8G 8GB

King Tiger Technology Tigo-X3-3200MHz-8G 8GB

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