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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X16GE2400C16S4 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Corsair CM4X16GE2400C16S4 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 10.2
    测试中的平均数值
Corsair CM4X16GE2400C16S4 16GB 需要考虑的原因
Corsair CM4X16GE2400C16S4 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 64
    左右 -100% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X16GE2400C16S4 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 32
  • 读取速度，GB/s
    4,651.3 left arrow 15.4
  • 写入速度，GB/s
    2,256.8 left arrow 10.2
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2815

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Corsair CM4X16GE2400C16S4 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378A4G43AB2-CWE 32GB
Samsung M378A4G43AB2-CWE 32GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston 9905678-014.A00G 4GB
内存RAM
Golden Empire CL5-5-5DDR2 1GB
Golden Empire CL5-5-5DDR2 1GB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
UMAX Technology 16GB
UMAX Technology 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
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G Skill Intl F4-3600C16-8GVK 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Essencore Limited KD4AGU880-32A160T 16GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM