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Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C15-4GNT 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-2400C15-4GNT 4GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 11.2
    测试中的平均数值
G Skill Intl F4-2400C15-4GNT 4GB 需要考虑的原因
G Skill Intl F4-2400C15-4GNT 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 64
    左右 -73% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C15-4GNT 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 37
  • 读取速度，GB/s
    4,651.3 left arrow 15.1
  • 写入速度，GB/s
    2,256.8 left arrow 11.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2824

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

G Skill Intl F4-2400C15-4GNT 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C15-4GNT 4GB
G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2133C15-16GFXR 16GB
G Skill Intl F4-2133C15-16GFXR 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMW32GX4M4A2666C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905598-039.A00G 16GB
Kingston 9905598-039.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2400C15-16GFXR 16GB
G Skill Intl F4-2400C15-16GFXR 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK64GX4M4D3600C18 16GB
Corsair CMK64GX4M4D3600C18 16GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905678-028.A00G 8GB
Kingston 9905678-028.A00G 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905713-019.A00G 4GB
Kingston 9905713-019.A00G 4GB
内存RAM