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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A1K43BB2-CRC 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M378A1K43BB2-CRC 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 10.0
    测试中的平均数值
Samsung M378A1K43BB2-CRC 8GB 需要考虑的原因
Samsung M378A1K43BB2-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 64
    左右 -78% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A1K43BB2-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 36
  • 读取速度，GB/s
    4,651.3 left arrow 14.7
  • 写入速度，GB/s
    2,256.8 left arrow 10.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2490

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Samsung M378A1K43BB2-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-4133C19-8GTZR 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX2400C15D4/8G 8GB
Kingston KHX2400C15D4/8G 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 9905624-023.A00G 8GB
Kingston 9905624-023.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMT128GX4M8X3600C18 16GB
Corsair CMT128GX4M8X3600C18 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X16GE2666Z16K4 16GB
Corsair CM4X16GE2666Z16K4 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
内存RAM