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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Chun Well Technology Holding Limited MD4U0840180BCW 8GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 26
  • 读取速度，GB/s
    9.7 left arrow 18.2
  • 写入速度，GB/s
    6.0 left arrow 17.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3938

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Apacer Technology D12.2344DT.001 4GB
Apacer Technology D12.2344DT.001 4GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
Samsung M393B2G70QH0-YK0 16GB
Samsung M393B2G70QH0-YK0 16GB
Samsung M393B2G70EB0-YK0 16GB
Samsung M393B2G70EB0-YK0 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2800C18-8GRS 8GB
G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM