RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BLE8G4D30AEEA.K16FD 8GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
低于PassMark测试中的延时,ns
42
62
左右 32% 更低的延时
需要考虑的原因
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
报告一个错误
更快的读取速度,GB/s
18
9.7
测试中的平均数值
更快的写入速度,GB/s
9.5
6.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
62
读取速度,GB/s
9.7
18.0
写入速度,GB/s
6.0
9.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1396
2018
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SpecTek Incorporated ?????????????????? 2GB
Corsair CMK64GX4M4A2400C16 16GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2133C15-4GFX 4GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-2133C15-8GRK 8GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 16G3200CL22 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M378A4G43MB1-CTD 32GB
Samsung M393B2G70BH0-YK0 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M378A1K43BB2-CRC 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3466C16-16GTZSW 16GB
报告一个错误
×
Bug description
Source link