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Nanya Technology NT512T64U88B0BY-3C 512MB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
18.4
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
71
左右 -163% 更低的延时
更快的写入速度,GB/s
14.9
1,322.6
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
27
读取速度,GB/s
2,831.6
18.4
写入速度,GB/s
1,322.6
14.9
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
399
3008
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix HMA82GU6JJR8N-VK 16GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Panram International Corporation PUD31600C114G2VS 4GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Crucial Technology CT102464BF160B-16F 8GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Terabyte Co Ltd RCX2-16G3600A 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston SNY1333D3S9ELC/4G 4GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Kingston 9905471-002.A00LF 2GB
Kingston HP26D4S9S8ME-8 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 9905663-008.A00G 16GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
报告一个错误
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Bug description
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