Nanya Technology NT512T64U88B0BY-3C 512MB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 16.7

测试中的平均数值

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 71

左右 -129% 更低的延时
更快的写入速度，GB/s

14.6 1,322.6

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 31
读取速度，GB/s

2,831.6 16.7
写入速度，GB/s

1,322.6 14.6
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

399 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CF7 2GB

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Apacer Technology D12.2324WT.001 8GB

Apacer Technology D12.2324WT.001 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

SK Hynix HMA82GR8AMR4N-TF 16GB

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Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston 9905624-033.A00G 8GB

Kingston 9905624-033.A00G 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB