Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMD32GX4M4C3466C16W 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Corsair CMD32GX4M4C3466C16W 8GB

需要考虑的原因
Corsair CMD32GX4M4C3466C16W 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 71

左右 -255% 更低的延时
更快的读取速度，GB/s

20.3 2

测试中的平均数值
更快的写入速度，GB/s

16.3 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMD32GX4M4C3466C16W 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 20
读取速度，GB/s

2,831.6 20.3
写入速度，GB/s

1,322.6 16.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 3708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT32G48C40U5.M16A1 32GB

Crucial Technology CT32G48C40U5.M16A1 32GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C16-16GTZR 16GB

G Skill Intl F4-3600C16-16GTZR 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMK64GX4M4B2800C14 16GB

Corsair CMK64GX4M4B2800C14 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB