Nanya Technology NT512T64U88B0BY-3C 512MB vs Essencore Limited KD4AGU88C-26N190A 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Essencore Limited KD4AGU88C-26N190A 16GB

Essencore Limited KD4AGU88C-26N190A 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 16.2

测试中的平均数值

Essencore Limited KD4AGU88C-26N190A 16GB

需要考虑的原因
Essencore Limited KD4AGU88C-26N190A 16GB

报告一个错误

低于PassMark测试中的延时，ns

66 71

左右 -8% 更低的延时
更快的写入速度，GB/s

8.3 1,322.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Essencore Limited KD4AGU88C-26N190A 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 66
读取速度，GB/s

2,831.6 16.2
写入速度，GB/s

1,322.6 8.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

399 1985

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung SH5724G4UNC26P2-SC 32GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Corsair CMK16GX4M4B3400C16 4GB

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Samsung M393B1K70QB0-CK0 8GB

Corsair CMD8GX4M2B3466C18 4GB

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Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB