Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

差异

  • 低于PassMark测试中的延时,ns
    35 left arrow 71
    左右 -103% 更低的延时
  • 更快的读取速度,GB/s
    9.8 left arrow 2
    测试中的平均数值
  • 更快的写入速度,GB/s
    7.9 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时,ns
    71 left arrow 35
  • 读取速度,GB/s
    2,831.6 left arrow 9.8
  • 写入速度,GB/s
    1,322.6 left arrow 7.9
  • 内存带宽,mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2126
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最新比较