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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905624-004.A00G 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston 9905624-004.A00G 4GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.3
    测试中的平均数值
Kingston 9905624-004.A00G 4GB 需要考虑的原因
Kingston 9905624-004.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 71
    左右 -209% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905624-004.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 23
  • 读取速度，GB/s
    2,831.6 left arrow 16.3
  • 写入速度，GB/s
    1,322.6 left arrow 12.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2512

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Kingston 9905624-004.A00G 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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