Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 72ASS4G72LZ-2G1A1 32GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Micron Technology 72ASS4G72LZ-2G1A1 32GB

需要考虑的原因
Micron Technology 72ASS4G72LZ-2G1A1 32GB

报告一个错误

低于PassMark测试中的延时，ns

39 71

左右 -82% 更低的延时
更快的读取速度，GB/s

8.8 2

测试中的平均数值
更快的写入速度，GB/s

7.7 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 39
读取速度，GB/s

2,831.6 8.8
写入速度，GB/s

1,322.6 7.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 2083

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4A2133C15 8GB

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Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

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Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-2400C15-8GTZRX 8GB

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AMD AE34G1601U1 4GB

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