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Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology CT8G4DFD8213.16FA2 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology CT8G4DFD8213.16FA2 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Micron Technology CT8G4DFD8213.16FA2 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
11.9
测试中的平均数值
需要考虑的原因
Micron Technology CT8G4DFD8213.16FA2 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
71
左右 -129% 更低的延时
更快的写入速度,GB/s
10.2
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology CT8G4DFD8213.16FA2 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
31
读取速度,GB/s
2,831.6
11.9
写入速度,GB/s
1,322.6
10.2
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
2585
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX2133C11D3/4GX 4GB
Kingston 99U5702-020.A00G 8GB
Kingston 9905403-011.A03LF 2GB
Kingston 99U5701-049.A00G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMR128GX4M8C3000C16 16GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK32GX4M2K4133C19 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A1G43TB1-CTD 8GB
A-DATA Technology AD73I1B1672EG 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C19-4GTZ 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston KHX2400C15S4/8G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A1K43CBCBCRC 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
报告一个错误
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Bug description
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