Nanya Technology NT512T64U88B0BY-3C 512MB vs Smart Modular SMU4WEC8C1K0464FCG 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值

Smart Modular SMU4WEC8C1K0464FCG 8GB

需要考虑的原因
Smart Modular SMU4WEC8C1K0464FCG 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 71

左右 -163% 更低的延时
更快的写入速度，GB/s

13.3 1,322.6

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Smart Modular SMU4WEC8C1K0464FCG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 27
读取速度，GB/s

2,831.6 17.0
写入速度，GB/s

1,322.6 13.3
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

399 3296

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3333C16-16GTZB 16GB

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Kingston HP669238-071-HYC 4GB

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SK Hynix HMA41GR7AFR8N-TF 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMK16GX4M2B3733C17 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB