Nanya Technology NT512T64U88B0BY-3C 512MB vs Transcend Information TS2GSH64V1B 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 12

测试中的平均数值

Transcend Information TS2GSH64V1B 16GB

需要考虑的原因
Transcend Information TS2GSH64V1B 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 71

左右 -137% 更低的延时
更快的写入速度，GB/s

8.3 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Transcend Information TS2GSH64V1B 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 30
读取速度，GB/s

2,831.6 12.0
写入速度，GB/s

1,322.6 8.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 2034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSE.16FD2 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston HP24D4U7S8MBP-4 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Corsair CMW64GX4M8Z2933C16 8GB

Corsair CMW64GX4M8Z2933C16 8GB

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston 9905630-039.A00G 16GB

Kingston 9905630-039.A00G 16GB