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Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Wilk Elektronik S.A. IR2400D464L17/16G 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
16.8
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
71
左右 -209% 更低的延时
更快的写入速度,GB/s
9.6
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
23
读取速度,GB/s
2,831.6
16.8
写入速度,GB/s
1,322.6
9.6
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
2726
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK64GX4M4C3000C16 16GB
A-DATA Technology DQKD1A08 1GB
Samsung M391A1G43DB0-CPB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston K6VDX7-MIE 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Teikon TMA851S6CJR6N-VKSC 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Smart Modular SF464128CK8I6GKSEG 4GB
报告一个错误
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